摘要
对不同时代的单片微波集成电路(MMIC)的器件工艺发展和应用发展状况进行概况总结,并结合当前的研究与应用热点,重点分析以砷化镓(GaAs)、氮化镓(GaN)为代表的微波化合物固态器件和基于MMIC的异构异质集成新技术路径,并就今后发展的趋势做出展望。
This paper introduces the development of microwave monolithic integrated circuit(MMIC).According to the current research hotspots,the research status of new structures of GaAs,GaN devices based on compound semiconductor and the research progress of heterogeneous integration technology about RF micro-system are put forward.Also the development trend in the future of MMIC is prospected.
作者
周德金
黄伟
宁仁霞
ZHOU Dejin;HUANG Wei;NING Renxia(School of Microelectromics Fudan University,Shanghai 200443,China;Wuxi Research Institute of Applied Technologies,Tsinghua University,Wuxi 214072,China;Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China;Engineering Technology Research Center of Intelligent Microsystems,Anhui Province,Huangshan University,Huangshan 245021,China)
出处
《电子与封装》
2021年第2期47-57,共11页
Electronics & Packaging
基金
广西精密导航技术与应用重点实验室开放基金(DH201913)
安徽省重点研究与开发计划(201904b11020007)。
关键词
微波单片集成电路
氮化镓
砷化镓
磷化铟
异质集成
monolithic microwave integrated circuit
GaN
GaAs
InP
heterogeneous integration
