基于SOI的E型膜结构耐高温压力芯片的设计与制造

Design and Fabrication of E-type Membrane Structural High Temperature Pressure Chip Based on SOI

文中设计了一种基于SOI材料的E型膜结构无引线倒封装压力芯片。SOI材料的选用解决了高温环境下漏电流的问题,可以满足目前航空发动机对于高温使用环境的要求。E型膜结构与传统C型膜结构相比解决了灵敏度与线性度无法同时满足需求的难题。通过无引线倒封装工艺,实现了传感器小型化、轻量化的设计需求。设计的压力传感器量程为0~1.5 MPa,400℃输出灵敏度为80 mV/MPa,线性度0.17%FS,综合精度0.18%FS。传感器最大外廓尺寸为S10 mm×20 mm,传感器质量为15.5 g。

This paper designed a leadless packaging pressure chip with E-type structural membrane based on SOI material.SOI material solved the problem of leakage current in high temperature,which can meet the requirements of aero-engine in high temperature environment.Compared with traditional C-type,E-type structural membrane solved the problem that the sensitivity and linearity can not meet requirements at the same time.Through the leadless packaging process,the miniaturization and lightweight design of the sensor were realized.The results show that the sensor achieved a sensitivity of 80 mV/MPa,a linearity of 0.17%FS,and an accuracy of 0.18%FS in the range of 0~1.5 MPa in 400℃condition.In addition,the maximum overall dimension of the sensor is S10 mm×20 mm,and the weight of the sensor is 15.5 g.