InGaAsP快速外延生长及其在太阳电池中的应用

Rapid Growth of InGaAsP and Its Application in Solar Cells

四元InGaAsP混晶是一种理想的可用于窄禁带太阳电池制备的半导体材料。本文研究了InP衬底上InGaAsP材料在不同外延生长速度下的掺杂特性和晶体质量。通过电化学电容-电压测试法,实验发现高生长速率下InGaAsP材料的Zn掺杂的掺杂浓度与Ⅲ族源流量无关,而Si掺杂的掺杂浓度随Ⅲ族源流量增加而减少。通过瞬态荧光光谱测试方法,实验发现高生长速率下InGaAsP材料非辐射复合和界面复合占比减少,载流子输运效率得到了提升。最后,带隙组合为1.16 eV/0.88 eV的高生长速率InP基双结电池完成器件工艺后进行测试,其在AM0光照条件下开路电压为1 287 mV,平均电压损失为340 mV。

Quaternary InGaAsP crystal is an ideal material for narrow bandgap solar cells. The doping properties and crystal quality of InP based InGaAsP material grown at different growth rates are studied in this paper. The experiment based on the electrochemical capacitance-voltage(ECV)method shows that Zn doping concentration at high growth rate is constant when Group III source flow changes,and Si doping concentration in high growth rate decreases when Group III source flow increases. Furthermore, the experiment based on the time-resolved photoluminescence(TRPL)method shows that nonradiative recombination and interface recombination of InGaAsP decreases at high growth rate,and the carrier transport efficiency is enhanced. Finally,a high growth rate InP dualjunction solar cell with a band gap combination of 1.16 eV/0.88 eV is tested after the device process is completed. Its open voltage is 1 287 mV under AM0 light condition. The average voltage loss is 340 mV.