SnO_(2)退火温度对钙钛矿太阳能电池性能的影响

Effect of SnO_(2) Annealing Temperature on the Performance of Perovskite Solar Cells

电子传输层是钙钛矿太阳能电池的关键部分,起到阻挡空穴、传输电子和减少电子空穴复合的作用。本研究采用低温溶液法制备SnO_(2)薄膜作为钙钛矿电池的电子传输层,研究SnO_(2)的退火温度对电子传输层微观形貌、物理性能以及钙钛矿太阳能电池性能的影响。结果表明:当退火温度为60、90、120和240℃时,SnO_(2)薄膜表面存在较多的孔隙;而退火温度为150、180和210℃时,薄膜表面孔隙较少。在实验温度下,制备的SnO_(2)薄膜为四方相,FTO玻璃上涂覆SnO_(2)薄膜后其透过率要优于空白FTO玻璃的透过率。当SnO_(2)退火温度为180℃时,薄膜的电子迁移率最高,钙钛矿电池具有最佳的传输电阻和复合电阻,所得电池的性能最优,其光电转换效率为17.28%,开路电压为1.09 V,短路电流为20.91 mA/cm^(2),填充因子为75.91%。

Electron transport layer is a key part for perovskite solar cell(PSC),which can block holes and transmit electrons to reduce recombination.In this study,SnO_(2) was synthesized with low-temperature solution-processed method and used as electronic transport layer for perovskite solar cells.The influence of annealing temperature on the properties of SnO_(2) films and PSCs were systematically studied.The results showed that with the annealing temperatures at 60,90,120,240℃,the surfaces of SnO_(2) films own more pores;while annealed at 150,180,210℃,the corresponding surfaces show fewer pores.It was found that the transmittance of FTO glass covered with SnO_(2) films is better than that of the bare FTO glass.With SnO_(2) annealed at 180℃,the electron mobility of the thin film is the highest.The corresponding PSC possesses the best transmission resistance,composite resistance,and superior photovoltaic performance.The photoelectric conversion efficiency,the open-circuit voltage,the short-circuit current and the filling factor were 17.28%,1.09 V,20.91 mA/cm^(2)and 75.91%,respectively.