半导体纳米线红外探测研究进展(特邀)

Recent advances in semiconductor nanowires infrared photodetectors(Invited)

近年来,红外探测器由于其在军民领域广阔的应用前景已经受到了越来越多的关注。为了进一步实现室温宽谱段、高灵敏度、快速响应以及低功耗的红外探测器,低维半导体作为极具潜力的新型沟道材料得到了广泛的研究。其中,纳米线有着独特的电学与光电特性,当被应用到红外光电探测器中时,展现出了巨大的优势,例如尺寸小、功耗低、光吸收效率高、表面态丰富、易于光电子分离与收集以及与传统硅基工艺兼容等等。当前,对于纳米线红外探测器的研究一直在进行中并不断取得突破。文中主要概述了纳米线在红外光电探测领域的最新研究进展,介绍了半导体纳米线的基本特性、材料选择和制备方法,展示了多种二元与三元化合物半导体中已实现红外探测的纳米线材料及其当前研究达到的探测水平,并且分类总结了多种进一步提高光电探测性能的方法,包括异质结合、外场调控、器件集成等,随后针对不同构型纳米线红外探测器的优缺点,进行了简要的对比与说明,最后基于该领域仍然面临的挑战对其未来的发展方向进行了展望,并为其技术发展路线提出了初步的建议。

In recent years,infrared photodetectors have attracted increasing interest due to their promising applications in both military and civil areas.To further realize room-temperature,wide-spectrum,high-sensitivity,fast-response and low-power consumption infrared photodetectors,low-dimension semiconductors are considered as potential channel materials and have been studied widely.Among them,nanowires have special electrical and photoelectrical characteristics,showing enormous advantages in the applications of infrared photodetectors such as small size,low power consumption,high light absorption efficiency,abundant surface states,outstanding ability to separate and collect photoelectrons,good compatibility with Si complementary metal-oxidesemiconductor(CMOS)technology and so on.At present,nanowires infrared photodetectors are going through continuous progress and breakthrough.In this review,recent advances in semiconductor nanowires infrared photodetectors were outlined in details.At the beginning,the basic characteristics,material choice and preparation methods of nanowires were introduced.Subsequently,many nanowires including binary and ternary compound semiconductors for the use of infrared detection were presented and their current detectable levels were illustrated precisely.Many methods of further improving their detecting performances were also classified and summarized,including constructing heterostructures,applying external field and integrating with other functional devices.On the basis of the above-mentioned advances,a comparison of advantages and disadvantages among different nanowires infrared detectors was given.In the end,the future development trend was indicated based on the challenges in this area and preliminary suggestions for the technical development route were presented.