LED微弧氧化铝基板及其表面金属化技术研究

Study on LED Microarc Alumina Substrate and its Surface Metallization Technology

基板散热问题已成为制约大功率LED发展的重要因素.文章采用微弧氧化技术在铝合金基板上制备了氧化物绝缘层,并采用磁控溅射工艺在其上制备了导电膜.制备的氧化铝绝缘层的热导率可达1.2 W/m·K,并有效减小基板的封装界面热阻,与常用的聚合物绝缘层基板相比,可有效提高基板的散热性能.得到了针对Cr/Ni-Cu金属膜层的最佳镀膜工艺,测试表明镀制的导电膜层结合力达到6.4Mpa.

The heat-dissipation problem of substrate has become a serious factor restricting the development of high-power LED. In this paper,the oxide film was prepared on aluminum alloy substrate by MAO(micro-arc oxidation),and the conductive film was prepared by magnetron sputtering. The thermal conductivity of the prepared alumina insulating layer can reach 1.2 W/m/K,and the thermal resistance of the substrate is reduced effectively. Compared with the common polymer insulating layer substrate,the heat dissipation performance of the substrate can be effectively improved. The optimum coating parameter for Cr/Ni-Cu film was obtained. Test shows the adhesive force between metal film and the substance is up to 6.4 Mpa.