接触/接近式光刻UV-LED光源测试分析与工艺研究

Study of the Performance and the Photolithograph Process ofMask Aligner Equipped with UV-LED Light Source

通过对比混波UV-LED(Ultraviolet Light Emitting Diode)光源和单波UV-LED光源的性能和工艺实验,优化了混波UV-LED光源光刻工艺。光源性能主要对比了两种光源最大光照强度和光强均匀度,工艺实验选用不同光照强度15 mW/cm^(2)、20 mW/cm^(2),不同曝光时间3 s和5 s,样片显影后通过光学显微镜观察样片线条形貌。结果表明:混波UV-LED光源相比单波UV-LED光源最大光照强度下降,从47.2 mW/cm^(2)降至32.8 mW/cm^(2),光强均匀度从97%降至95%。混波UV-LED光源真空复印模式下最优曝光工艺为光强20 mW/cm^(2),曝光时间3 s。

The mix-wave UV-LED light source performance and the lithograph process are studied.In the performance test,the light intensity and uniformity are detected for the two light sources:single wave light source and mix-wave light source.The process experiments are performed with the light intensity of 15 mW/cm^(2) and 20 mW/cm^(2) at exposure time of 3 s and 5 s.The results shows that compared with single wave light,the maximum light intensity of the mix-wave light resource decreases from 47.2 mW/cm^(2) to 32.8 mW/cm^(2),the uniformity decreases from 97%to 95%.For the mix-wave light,the optimum lithograph process parameters of AZ5214E photoresist are at light intensity of 20 mW/cm^(2) and exposure time 3 s in vacuum copy mode.