摘要
介绍了碲锌镉晶片双面磨抛机的工艺过程和原理,研究了双面磨抛工艺中磨抛液粒度、抛光压力、抛光液流量和工作台转速对晶片表面损伤层深度的影响。
The process and principle of double side lapping and polishing machine for CZT(Cadmium Zinc Telluride)wafer are introduced in this paper,the effect of double side lapping and polishing fluid particle size,polishing pressure,polishing fluid flow rate and the chuck rotation speed on the wafer surface damage layer are studied.
作者
张文斌
郭东
葛劢
ZHANG Wenbin;GUO Dong;GE Maichong(The 45^(th)Research Institute of CETC,Beijing 100176,China)
出处
《电子工业专用设备》
2021年第1期5-7,46,共4页
Equipment for Electronic Products Manufacturing
关键词
碲锌镉
双面磨抛
表面损伤层
Cadmium zinc telluride(CZT)
Double side lapping and polishing
Surface Damage Layer
