卷曲量子阱红外探测器应力变化及对探测性能的影响

Stress evolution and its effects on the detection performance of selfrolled quantum well infrared detector

研究了卷曲量子阱红外探测器的应力状态变化及对光电性能的影响,发现拉应力使导带能级上移,压应力则使其下移,且双量子阱结构的卷曲薄膜的能带移动取决于两个量子阱的合应力变化;卷管薄膜可以有效将应力变化转变为应变,从而减小环境温度变化对能带移动的影响,提高红外器件温度稳定性;褶皱薄膜相比于卷管薄膜的量子阱具有较大的压应力,导致其光响应率较低;相同外加偏压下,卷管器件比褶皱器件的电压响应率提高约2.5倍。

In this study,we investigate the stress evolution and its effects on the detection performance of self-rolled quantum well infrared detector.It is found that tensile stress can move the energy level of conduction band up,while compressive stress moves it down.The band movement of self-rolled film with double quantum wells depends on the change of resultant stresses in the two quantum wells.The rolled-up sample can effectively transform the stress change into strain,so as to weaken the impact of ambient temperature and enhance the stability of infrared devices.The wrinkled film has higher compressive stress compared with the rolled-up sample,which results in lower responsivity.When the same bias voltage is applied,the voltage responsivity of the rolled-up sample is about 2.5 times higher than that of the wrinkled sample.