摘要
Carbon-doped In Ga As Bi films on In P:Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped In Ga As Bi films were characterized by Van der Pauw-Hall measurement and transmission line method(TLM)with and without rapid thermal annealing(RTA).It was found that the specific contact resistance decreases gradually with the increase of carrier concentration.The electron concentration exhibits a sharp increase,and the specific contact resistance shows a noticeable reduction after RTA.With RTA,the In Ga As Bi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6×10^(21) cm^(-3) and achieved an ultra-low specific contact resistance of 1×10^(-8)Ω·cm^(2),revealing that contact resistance depends greatly on the tunneling effect.
作者
Shu-Xing Zhou
Li-Kun Ai
Ming Qi
An-Huai Xu
Jia-Sheng Yan
Shu-Sen Li
Zhi Jin
周书星;艾立鹍;齐鸣;徐安怀;颜家圣;李树森;金智(Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices,Hubei University of Arts and Science,Xiangyang 441053,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Hubei Key Laboratory of High Power Semiconductor Technology,Xiangyang 441021,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.11705277 and 61434006)
the Project of Hubei University of Arts and Science(Grant No.XK2019053)。
