基于等效电导率的压接型IGBT器件温度场仿真

Temperature Field Simulation of Press-Pack IGBT Module Based on Equivalent Conductivity

压接型封装全控器件由于其具有无焊点、无引线、双面散热的特点,逐渐在大容量换流器中得到了广泛的应用,其可靠性以及寿命预测也引起了学术界和工业界的关注。本文提出了一种基于等效电导率的压接型绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)器件温度场有限元仿真方法,直接反映了压接型IGBT器件内部芯片发热功率随温度变化的特性,进一步提高了温度场仿真的准确性,为模块可靠性分析和寿命预测建立了仿真计算基础。此外,对某型号压接型IGBT器件进行MMC工况下的温度场仿真,得到了该工况下模块内部温度分布情况。

Due to its solderless,wireless,and double-sided heat dissipation,the press-pack IGBT(insulated gate bipolar transistor)is widely used in large-capacity inverters.Its reliability and life prediction have also attracted the attention of academics and industry.In this paper,a finite element simulation method for temperature field of press-pack IGBT module based on equivalent conductivity is proposed.It directly reflects the characteristics that the power dissipation of the internal chip of the press-pack IGBT module changes with temperature.This method also further improves the accuracy of temperature field simulation,and establishes the basis of simulation calculation for module reliability analysis and life prediction.In addition,the temperature field simulation of a certain type of crimping IGBT module under MMC conditions is obtained,and the internal temperature distribution of the module under this condition is obtained.