附加偏置电场对电弧离子镀TiN薄膜结构和性能的影响

Effects of Extra Biased Electric Field on Structure and Properties of TiN Films Deposited by Arc Ion Plating

为了改善电弧离子镀薄膜表面存在的大颗粒污染问题,在真空室内附加一个与靶-基连线垂直的偏置电场,探究不同偏置电压对薄膜表面形貌、微观结构和力学性能的影响规律。结果表明,不同电压下TiN薄膜均呈晶态,沿(111)晶面择优生长,薄膜的微观结构受偏置电场的影响很小。随偏置电压增大,薄膜的结合力、显微硬度呈现先增后减趋势,在24V时均达最大值,电压进一步增大到32V时,结合力和显微硬度反而有少许下降。偏置电场可以有效改善薄膜表面形貌,当电压为32V时,薄膜表面质量最好,摩擦因数仅为0.115。

In order to solve or reduce macro-particle pollution in arc ion plating, an extra biased electric field is applied during the deposition of TiN films. The influence of extra biased voltage on surface morphology, microstructure, micro-hardness,adhesion strength and friction coefficient of the TiN films is investigated. The results show that all the TiN films have(111)preferential growth plane, and the microstructure is little affected by the extra biased electric field. Both adhesion strength and micro-hardness of the TiN films increase with increasing voltage from 0 to 24 V, followed by a small decrease at 32 V. The extra biased field greatly improves surface morphology of TiN films, and the smallest friction coefficient of 0.115 is achieved at 32 V.