不同腐蚀工艺对单晶Ge位错密度与微观形貌的影响

Effect of different corrosion processes on single crystal Ge dislocation density and micromorphology

为提高单晶Ge位错腐蚀工艺的准确度,采用金相腐蚀观察法计算了单晶Ge的位错密度,分析了腐蚀时间、抛光条件、腐蚀温度对位错微观形貌的影响。结果表明:腐蚀时间过长或过短,位错腐蚀坑形貌无法正常观测,腐蚀时间10 min时,位错腐蚀坑形貌观测效果最佳;机械抛光会产生划痕和污渍,化学抛光可以得到更光洁的材料表面,腐蚀后更易观测位错腐蚀坑形貌;相同腐蚀时间和抛光条件下,温度越高腐蚀速率越快,通过增加腐蚀温度可以有效提高腐蚀效率。

In order to improve the accuracy of the dislocation corrosion process of single crystal Ge,the dislocation density of single crystal Ge was calculated by the metallographic corrosion observation method.The effects of corrosion time,polishing condition and corrosion temperature on the dislocation micromorphology were analyzed.The results show that when the corrosion time is too long or too short,the dislocation corrosion pit morphology cannot be observed normally,and when the corrosion time is 10 minutes,the dislocation corrosion pit morphology is the best.The mechanical polishing will produce scratches and stains,and chemical polishing can obtained the smoother and clearer surface.The smoother surface is easier to observe the morphology of the dislocation corrosion pit after corrosion;under the same corrosion time and polishing conditions,the higher the temperature,the faster the corrosion rate,and the corrosion efficiency can be effectively improved by increasing the corrosion temperature.