摘要
The commercialization of lithium niobate on insulator(LNOI) wafer has resulted in significant on-chip photonic integration application owing to its remarkable photonic,acousto-optic,electro-optic,and piezoelectric nature.In recent years,a variety of high-performance on-chip LNOI-based photonic devices have been realized.In this study,we developed a 1-mol% erbium-doped lithium niobate crystal and its LNOI on a silicon substrate and fabricated an erbium-doped LNOI microdisk with high quality factor(~1.05×105).C-band laser emission at ~1530 and ~1560 nm(linewidth 0.12 nm) from the high-Q erbium-doped LNOI microdisk was demonstrated with 974-and 1460-nm pumping,with the latter having better thermal stability.This microlaser would play an important role in the photonic integrated circuits of the lithium niobate platform.
基金
supported by the National Key R&D Program of China (Grant Nos. 2019YFB2203500, and 2017YFA0303700)
the National Natural Science Foundation of China (Grant No. 91950107)
the Foundation for Development of Science and Technology of Shanghai (Grant No. 17JC1400400)。