在片LRRM校准件研制及标定

Development and Definition of On-Wafer LRRM Calibration Standards

研制了75~110 GHz氧化铝陶瓷衬底在片LRRM校准件,建立了校准件的电路模型。为了实现LRRM校准件高准确度的标定,还研制了多线TRL校准件。通过测量和计算相结合的方式对LRRM校准件中传输线标准的特征阻抗、延时、损耗,反射标准的延时和匹配负载的电阻、电感进行标定。分别采用标定的校准件、研制的多线TRL校准件和商用校准件104-783A对在片S参数测量系统进行校准,测量相同的衰减器和短路标准,结果显示,在75~110 GHz频段传输幅度最大偏差0.07 dB,传输相位最大偏差1.5°,反射幅度最大偏差0.02(线性值),反射相位最大偏差2.9°。

75-110 GHz on-wafer LRRM calibration standards on the ceramic substrate are developed,and measurement model of calibration standards is established.For accurate definition of the calibration standards,multiline thru-reflect-line(TRL)assistant standards are also fabricated on the same wafer and measured.The characteristic impedance,delay,loss of transmission line standard,the delay of reflection standard and the resistance,inductance of match standard are defined by measurement and calculation.The S-parameter measurement systems are calibrated by self-made calibration standards and commercial calibration standards,and the same attenuator and short calibration standards are measured.The results show that at the frequency of 75-110 GHz,the maximum deviation of the transmission magnitude is 0.07 dB,and the maximum deviation of transmission phase is 1.5°,the maximum deviation of reflection magnitude is 0.02,and the maximum deviation of reflection phase is 2.9°.