一种离子敏感场效应晶体管的建模策略

基于半导体仿真软件TCAD设计了一种离子敏感场效应晶体管的模型,首先介绍了离子敏感场效应晶体管的结构及工作原理,其次分析了敏感场效应晶体管在仿真中存在的难题,在此基础上提出了相应的建模方式,最后在TCAD中成功搭建了仿真模型,通过仿真敏感场效应晶体管的灵敏度验证了该模型的准确性,解决了TCAD无法模拟溶液的难题,为离子敏感场效应晶体管的研究开辟了新的道路。

Based on the semiconductor simulation software TCAD,a model of ion sensitive field effect transistor is designed.Firstly,the structure and working principle of ion sensitive field effect transistor are introduced.Secondly,the problems existing in the simulation of ion sensitive field effect transistor are analyzed.On this basis,the corresponding modeling method is proposed.Finally,the simulation model is successfully built in TCAD The sensitivity of the transistor verifies the accuracy of the model,solves the problem that TCAD cannot simulate the solution,and opens up a new way for the research of sensitive field effect transistor.