氧化石墨烯掺杂浓度对聚3,4乙烯二氧噻吩复合导电薄膜的影响

Effects of Graphene Oxide Doping Concentrations on Poly(3,4-Ethylenedioxythiophene) Composite Conductive Films

采用电化学恒电位法制备了用于染料敏化太阳能电池(DSSC)的聚3,4乙烯二氧噻吩(PEDOT)与氧化石墨烯(GO)掺杂的复合导电薄膜,然后对薄膜的结构和形貌进行了表征,并用四探针仪测试了薄膜的方阻,最后研究了GO掺杂浓度对薄膜性能的影响,获得了最佳的制备工艺。结果表明:在GO质量浓度为0.3g/L时制备的复合薄膜具有最优的性能,GO的掺杂使该复合薄膜具有更大的比表面积、更好的电学特性以及更低的电荷转移电阻(5.23Ω·cm ^(2));该复合薄膜具有良好的氧化还原催化特性,其作为对电极组装的电池性能更佳,填充因子为0.68,光电转化效率相较于纯PEDOT从4.43%提高到6.23%。

In this study,composite conductive films doped using poly(3,4-ethylenedioxythiophene)(PEDOT)and various concentrations of graphene oxide(GO)for dye-sensitized solar cells(DSSC)were prepared by the potentiostatic method.The structure and morphology of the composite films were characterized and the square resistance of the different films was measured using a four-probe apparatus.The effect of GO doping concentrations on the properties of the films was investigated,and the optimum preparation process was obtained.The results indicate that the composite film deposited at a GO concentration of 0.3g/L has the best properties,and the film has a high specific surface area,good electrical properties,low charge transfer resistance(5.23Ω·cm ^(2)),because of the doping of GO.The composite film shows good redox catalytic properties.Compared with pure PEDOT,the photoelectric conversion efficiency of the DSSC assembled with the composite film as counter electrode increases from 4.43%to 6.23%with a fill factor of 0.68.