双向低触发电压横向晶闸管放电管研究

Research on Transverse Silicon Controlled Rectifier Discharge Transistor with Bidirectional Low Trigger Voltage

依据触发电压V_(S)、触发电流I_(S)、维持电流IH及触发电压、维持电流高低温变化率指标要求,利用Silvaco-TCAD半导体器件仿真软件完成了双向低触发电压横向晶闸管(SCR)放电管的设计。详细分析了对触发特性产生显著影响的结构参数(N^(-)衬底区、寄生PNP晶体管P^(-)集电区、寄生NPN晶体管P^(-)基区、N^(+)阴极区、N^(+)触发区、寄生PNP晶体管P^(-)集电区与寄生NPN晶体管P^(-)基区间距、寄生NPN晶体管表面基区宽度)对器件输出I-V特性及抗瞬态电流烧毁能力的影响。根据设计得到的器件结构参数,绘制版图、制定双向低触发电压横向SCR放电管工艺方案并进行试制。通过实际流片,对关键的设计及工艺进行攻关,研制出样片触发电压V_(S)、触发电流I_(S)、维持电流I_(H)及触发电压、维持电流高低温变化率完全满足电参数指标要求。

According to the requirements of the electrical parameters of trigger voltage V_(S),switching current I_(S),hold current I_(H) and V_(S),IH high and low temperature rate of change,the Silvaco-TCAD semiconductor device simulation software was used to complete the design of the transverse silicon controlled rectifier(SCR)discharge transistor with bidirectional low trigger voltage.The N^(-)substrate,parasitic PNP transistor P^(-)collector region,parasitic NPN transistor P^(-)base region,N^(+)cathode region,N^(+)trigger region,parasitic PNP transistor P^(-)collector region and parasitic NPN transistor P^(-)base region spacing,parasitic NPN transistor base surface width are important structural parameters of the transverse SCR discharge transistor with bidirectional low trigger voltage,which have a significant impact on the triggering characteristics of the device.The effects of the above structural parameters on the output I-V characteristics and the resistance to transient current burn down of the device were analyzed in detail.According to the structure parameters of the device,the layout is drawn,and the process scheme of transverse SCR discharge transistor with bidirectional low trigger voltage was developed and trial-produced.Through the actual flow sheet,the key technology was solved,the V_(S),I_(S),IH,and V_(S),I_(H) high and low temperature change rate of the developed sample sheet can fully meet the requirements of the electrical parameters.