摘要
This work reviews the state-of-the art multi-gate field-effect transistor(MuGFET)process technologies and compares the device performance and reliability characteristics of the MuGFETs with the planar Si CMOS devices.Owing to the 3D wrapped gate structure,MuGFETs can suppress the SCEs and improve the ON-current performance due to the volume inversion of the channel region.As the Si CMOS technology pioneers to sub-10 nm nodes,the process challenges in terms of lithography capability,process integration controversies,performance variability etc.were also discussed in this work.Due to the severe self-heating effect in the MuGFETs,the ballistic transport and reliability characteristics were investigated.Future alternatives for the current Si MuGFET technology were discussed at the end of the paper.More work needs to be done to realize novel high mobility channel MuGFETs with better performance and reliability.
基金
This work was supported by Zhejiang Provincial Natural Science Foundation of China under Grant LR18F040001,LY19F040001
the Opening Project of Key Laboratory of Microelectronic Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences.
