热处理对钛掺杂类金刚石薄膜场发射性能的影响

Effect of Heat Treatment on Field Emission Properties of Ti-Doped Diamond-like Carbon Film

采用多靶磁控溅射技术制备了钛掺杂类金刚石(Ti-DLC)薄膜,并在不同温度(300,350,400℃)下进行了热处理,研究了热处理温度对薄膜微观结构、成分、能带结构以及场发射性能的影响。结果表明:与热处理前的相比,300℃热处理后Ti-DLC薄膜中sp^(2)-C团簇相对含量增大,光学带隙最小,开启场强最低,为5.43 V·μcm^(-1),场发射性能最好;当热处理温度高于300℃时,薄膜的DLC含量减少,同时生成大量TiO_(2),光学带隙增加,薄膜开启场强增大,场发射性能变差;薄膜的场发射电流基本不受热处理温度的影响。

The Ti-doped diamond-like carbon(Ti-DLC)film was prepared by multi-target magnetron sputtering technique,and was heat-treated at different temperatures(300,350,400℃).The effects of heat treatment temperature on the microstructure,composition,band structure and field emission properties of the film were studied.The results show that compared with those before heat treatment,the proportion of sp^(2)-C clusters in the Ti-DLC film after heat treatment at 300℃increased;the optical band gap was the smallest,and the turn-on field with value of 5.43 V·μm^(-1)was the smallest,indicating the film had the best field emission performance.As the temperature was higher than 300℃,the content of diamond-like carbon in the films dropped,and a large amount of TiO_(2)formed;the optical band gap and the turn-on field increased,indicating the field emission performance of the films got worse.The field emission current of the film was not affected by the heat treatment temperature.