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一种复合式MEMS皮拉尼真空计的设计 被引量:3

Design of Composite-Type MEMS Pirani Vacuum Gauge
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摘要 微电子机械系统(MEMS)皮拉尼真空计可广泛用于芯片封装和设备测试等领域。量程是MEMS皮拉尼真空计的重要性能指标之一。设计了一种复合式MEMS皮拉尼真空计,通过将具有不同测量范围的两款器件串联复合在同一芯片上,实现量程的扩展。以二极管型皮拉尼真空计为例设计了器件结构,优化了尺寸参数,并给出了兼容CMOS工艺的制造方案。最后通过COMSOL仿真,获得器件气压测量范围可达2.5×10^(-3)~1.15×10^(6)Pa,同时平均灵敏度达到132 mV/dec。相比于现有的单一型和组合式器件,设计的复合式MEMS皮拉尼真空计可以在小尺寸情况下具有更大的量程兼更高的灵敏度。 Micro-electromechanical system(MEMS)Pirani vacuum gauges can be widely used in chip packaging,equipment testing and other fields.Measurement range is one of the important performance indicators of MEMS Pirani vacuum gauges.A composite-type MEMS Pirani vacuum gauge was designed,and its measurement range was expanded by combining two devices with different measuring ranges in series on the same chip.With a diode-type Pirani vacuum gauge as an example,the device structure was designed,the size parameters was optimized,and a manufacturing scheme compatible with CMOS process was given.Finally,through COMSOL simulation,the designed device has a pressure measurement range of 2.5×10^(-3)~1.15×10^(6)Pa and a average sensitivity of 132 mV/dec.Compared with the existing single and combined-type devices,the designed composite-type MEMS Pirani vacuum gauge has larger range and higher sensitivity in a small size.
作者 周琼 傅剑宇 刘超 侯影 陈大鹏 Zhou Qiong;Fu Jianyu;Liu Chao;Hou Ying;Chen Dapeng(Integrated Circuit Aduanced Process R&.D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China;Wuxi IOT Innovation Center Co.,Ltd.,Wuzi 214135,China)
出处 《微纳电子技术》 CAS 北大核心 2021年第1期47-53,共7页 Micronanoelectronic Technology
基金 国家自然科学基金资助项目(61874137) 北京市科委重点研发计划资助项目(Z191100010618005) 中国科学院科研仪器设备研制项目(ZDKYYQ20200007)。
关键词 微电子机械系统(MEMS) 皮拉尼真空计 串联复合 二极管型 COMSOL仿真 micro-electromechanical system(MEMS) Pirani vacuum gauge compound in series diode-type COMSOL simulation
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  • 1胡旭,黄承彩,太云见,蔡毅.非制冷铁电混合式焦平面探测器新研究[J].光子学报,2005,34(11):1685-1687. 被引量:2
  • 2李超波,焦斌斌,石莎莉,叶甜春,陈大鹏,张青川,郭哲颖,董凤良,伍小平.基于MEMS技术的红外成像焦平面阵列[J].Journal of Semiconductors,2006,27(1):150-155. 被引量:7
  • 3UENO M, KOSASAYAMA Y, SUGINO T, et al. 640 × 480 pixel uncooled infrared FPA with SOI diode detectors [J]. Proc of the SPIE. 2005, 5783 (2):566- 577.
  • 4EMINOGLU S, TANRIKULU M Y, AKIN T. A low-cost 128 × 128 oncooled infrared detector array in CMOS process [J]. Journal of Microelectromechanical Systems, 2008, 17 (1) : 20 - 30.
  • 5MIYASHITA H, ESASHI M. Wide dynamic range silicon diaphragm vacuum sensor by electrostatic servo system [J] . Journal of Vacuum Science & Technology: B (microelectronics and nanometer structures), 2000, 18 (6): 2692-7.
  • 6CATLING D C. High-sensitivity silicon capacitive sensors for measuring medium-vacuum gap pressures [J] . Sensors and Actuators: A, 1998, 64: 157-164.
  • 7MAIER-SCHNEIDER D, MAIBACH J, OBERMEIER E. A new analytical solution for the load-deflection of square membranes [J] . Journal of microelectromechanical system, 1995, 4 (4) : 238-241.
  • 8WANG J,CHEN D,LIU L,et al.A micromachined resonant pressure sensor with DETFs resonator and different structures[C]//Proceedings of IEEE Sensors Conference.Christchurch,New Zealand,2009:1321-1324.
  • 9MITCHELL J,LAHIJI G,NAJAFI K.An improved performance poly-Si Pirani vacuum gauge using heat-distributing structural supports[J].J Microelectromech Syst,2008,17(1):93-102.
  • 10LI Q,GOOSEN J,van BEEK J,et al.A SOI Pirani sensor with triple heat sinks[J].Sens Actuators:A,2010,162(2):267-271.

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