一种基于自主可控eMRAM的高随机性能存储技术研究

A High Random Performance Storage Technology Based on Autonomous Controlled eMRAM

随着半导体工艺技术的不断进步、芯片工艺制程的不断演进,NAND Flash容量越来越大,集成度越来越高,连续读写性能问题通过多并发得到提升,已不再是非易失存储系统设计环节的主要瓶颈,取而代之,由于NAND Flash读写潜伏期的存在,随机性能提升成为是非易失存储系统设计中的关键核心问题。磁存储器件,作为国内自主研发的新型存储器重点方向之一,有着广泛的应用前景。引入磁存储芯片作为非易失存储器件的高速缓存,能够有效降低读写延时,提升非易失存储设备随机性能,大大提升产品竞争力和性能.

With the continuous progress of semiconductor technology and the continuous evolution of the process of chip process,NAND Flash capaci⁃ty is much bigger,the integration is much higher.Continuous read and write performance is not main problem in a none-volatile storage system,instead,random performance has become the key core problems in a none-volatile storage system.Magnetic storage device,as one of the key directions of new memory developed independently in China,has broad application prospects.This paper introduces a cache based on magnetic memory chip as internal storage device,which can effectively reduce the read-write delay,effectively improve the ran⁃dom performance of non-volatile storage device,and greatly improve the competitiveness and performance of the product.