ZnO/PbS异质结量子点太阳能电池的界面修饰及稳定性研究

Interface modification and stability of ZnO/PbS heterojunction quantum dot solar cells

对ZnO/PbS异质结量子点太阳能电池的界面修饰及稳定性进行研究,采用ZnO电子传输层掺杂金属Mg及引入电子阻挡层两种界面修饰方法,制备了不同的量子点太阳能电池器件,并对其进行伏安特性测试。结果表明,界面修饰可调整界面能级结构、减少缺陷复合、增强电荷传输。经过界面修饰的器件获得了9.46%的光电转换效率(PCE),分别比未掺杂的器件(PCE为5.41%)和无电子阻挡层结构的器件(PCE为1.60%)提升了约75%和491%。此外,经过30 d的空气暴露后,界面修饰后的器件仍能保持原有PCE的95%以上。

In this work,the interface modification and stability of ZnO/PbS heterojunction quantum dot solar cells were studied.Two interface modification methods,doping Mg in ZnO electron transport layer and introducing electron blocking layer into the device,were investigated.The results show that interface modification could adjust the interface energy level structure,reduce defect recombination,and enhance the charge transmission,thus improve the power conversion efficiency(PCE)of solar cells.The PCE of the device treated by interface modification is 9.46%,which improves approximately 75%and 491%comparing with the undoped one(PCE=5.41%)and the device without electron blocking layer(PCE=1.60%),respectively.Interface modification is demonstrated to be an effective strategy for optimizing the photovoltaic performance of ZnO/PbS heterojunction solar cells and maintaining great air storage stability.In addition,after 30 days of air exposure,the interface modified device can still maintain more than 95%of the original PCE.