P波段超宽带GaN功放模块研制

Design of P⁃band ultra wideband GaN power amplifier module

该文基于第三代半导体材料的GaN功率管,研制了一款P波段超宽带GaN功放模块。采用三级增益放大设计,末级放大电路通过推挽结构实现大功率输出,结构采用上、下腔一体化设计,满足小型化及散热要求。测试结果表明,在工作电压36 V、工作脉宽3 ms、占空比30%条件下,该功放模块在200 MHz工作带宽下,可实现420 W功率输出,效率优于69%。通过工艺控制,该功放模块批产后,指标一致性好,且具有体积小、重量轻、故障返修率低等特点,在国内同类产品中,处于技术领先地位,可广泛应用于中远程雷达。

A P⁃band ultra wideband GaN power amplifier module based on GaN power transistor which is the third generation semiconductor materials is design.This power amplifier module adopts three stage gain amplifier design and realizes high power output through push⁃pull structure at the last amplifier circuit.The structure uses integrate design of upper and lower cavities to meet the requirements of miniaturization and thermal dissipation.The test results show that the output power of this power amplifier module is more than 420 W and the efficiency is more than 69%in the band of 200 MHz under the conditions of 36 V working voltage,3 ms pulse width and 30%duty cycle.Through the process control,this power amplifier module has the advantages of good consistency,small size,light weight,low failure repair rate,etc.It is in the leading position of technology in the domestic similar products,and can be widely used in the medium or long⁃range radar.