摘要
The columnar-to-equiaxed transition(CET)or the formation of stray grains in the laser melting deposition is the least desirable for the repair of single-crystal blades.In this work,the forced water-cooling was conducted on a single-crystal Rene N5 substrate during the direct energy deposition(DED).The single track remelting,one-layer,two-layer,and eight-layer depositions were investigated to explore the grain growth mechanism.The solidification conditions of the DED process,including temperature field,temperature gradient,and solidification speed,were numerically analyzed by a finite element model.The single-track remelting results showed that the fraction of columnar crystal regions increases from55.81%in the air-cooled sample to 77.14%in the water-cooled one.The single-track deposits of one-and two-layer have the same trend,where the proportion of columnar crystal height was higher under the forced water-cooled condition.The electron backscattered diffraction(EBSD)grain-structure maps of an eight-layer deposit show that the epitaxial growth height increases from 1 mm in the air-cooling sample to 1.5 mm in the water-cooling one.The numerical results showed that the tempe rature gradient in[0011 direction was significantly increased by using forced water-cooling.In conclusion,the in-situ substrate cooling can become a potential method to promote epitaxial growth during DED via the influence on CET occurrence.
基金
supported financially by the Chinese National Science and Technology Major Project“Aeroengine and Gas Turbine”(No.2017-VII-0008-0102)
the National Key Research and Development Program of China(No.2019YFA0705300)
the Shanghai Science and Technology Committee(No.19DZ1100704)
Shanghai Sailing Program(No.19YF1415900)。
