基于0.15μm GaN工艺的2~18 GHz两级分布式放大器

2-18 GHz Two Stage Distribute Power Amplifier by 0.15μm GaN Process

介绍了一款2~18 GHz的宽带放大器MMIC,该MMIC利用0.15μm GaN HEMT工艺设计加工,采用两级分布式结构设计,实现了较高的整体电路增益。利用Agilent ADS仿真设计软件对整体电路的原理图和版图进行仿真优化设计。在2~18 GHz工作频率范围内,电路小信号增益>20 d B,增益平坦度<±1.5 d B,输入输出回波损耗<-10 d B,输出功率>30 d Bm,功率附加效率(PAE)>7%,电路工作电压为25 V,最大功耗为7 W,芯片面积为4.5 mm×2.5 mm。

A 2-18 GHz wide band MMIC is designed and manufactured by 0.15μm GaN HEMT process in this paper.Two stage distribute amplifier is used to improve the gain.The overall circuit schematic and layout is simulated and optimized in momentum of ADS.The electrical characteristics are as follows,in the working frequency range of 2-18 GHz,small signal gain>20 d B,gain flatness<±1.5 d B,input and output return loss<-10 d B,output power>30 d Bm,power added efficiency(PAE)>7%.The working voltage of the circuit is 25 V,the maximum power consumption is 7 W,and the chip area is 4.5 mm×2.5 mm.