基于二维半导体材料光电器件的研究进展

Research Progress of Photoelectric Devices Based on 2D Semiconductor Materials

近年来,二维半导体材料因其独特的晶体结构和优良的电子、光电特性吸引了众多科研人员的关注。利用这些材料作为有源沟道,制备出了许多新颖的器件结构,性能较传统器件有很大的提升。在各种器件应用中,基于二维材料的光电探测器由于能够实现红外及太赫兹波段的光探测,得到了最为广泛的研究。综述了近年来二维材料在光电器件领域的应用,介绍了光电探测器的主要参数,从电极制备、异质结构筑、量子点和分子掺杂、表面等离激元耦合以及界面屏蔽5方面介绍了目前在二维材料中调控光电性能的方法,对已有方法进行了总结,并且对未来的发展进行了讨论。

In recent years,two-dimensional semiconductor materials have attracted the attention of many researchers because of their unique crystal structure and excellent electronic and photoelectric properties.Making use of these materials as active channels,many novel optoelectronic device structures have been prepared,and their performance is greatly improved compared with that of traditional devices.In various device applications,photodetectors based on two-dimensional materials has been widely studied because it can realize infrared and terahertz band light detection.In this paper,the applications of two-dimensional materials in optoelectronic devices in recent years are reviewed.The main parameters of photodetector are introduced.The five aspects in two-dimensional material adjustable method are introduced,from electrode preparation,heterostructure construction,quantum dots and molecular doping,surface plasmon coupling and interface passivation.The existing methods are summarized and the future development is discussed.