低压调整二极管击穿特性分析与优化设计

Breakdown Characteristics Analysis and Optimization Design of Low Voltage Regulator Diode

介绍了采用平面结构设计与Si外延工艺制造低压调整二极管的技术。该技术论证了Si平面结型5.1 V低压调整二极管的击穿机理为隧道击穿,同时设计了一种新型Si平面结型低压调整二极管的结构,以及与此结构相匹配的工艺制程,进而实现5.1 V击穿电压特性为硬击穿。此硬击穿优化的关键是对结构设计、氧化工艺的深度研究。

This paper introduces the technology of fabricating low voltage regulator diode by plane structure design and Si epitaxial process.The technology demonstrates that the breakdown mechanism of Si planar junction 5.1 V low-voltage voltage regulating diode is tunnel breakdown.Meanwhile,the structure of a new Si planar junction low-voltage regulating diode and the process corresponding to this structure are designed to realize the breakdown voltage characteristic of 5.1 V as hard breakdown.The key technologies of hard breakdown optimization are structural design and in-depth study of oxidation process.