摘要
基于SiC衬底0.25μm GaN HEMT工艺,设计实现了一款C波段、高效率和高线性的单片微波集成电路(MMIC)功率放大器。通过优化电路匹配结构,选择合适的有源器件和恰当的直流偏置条件,实现低视频漏极阻抗;利用后级增益压缩和前级增益扩张对消等手段,实现高功率附加效率和好的线性指标。功率放大器芯片尺寸为2.35 mm×1.40 mm。芯片测试结果表明,在3.7~4.2 GHz频率范围内,漏极电压28 V、末级栅极电压-2.2 V、前级栅极电压-1.8 V和连续波条件下,该功率放大器的小信号增益大于25 dB,大信号增益大于20 dB,饱和输出功率大于39 dBm,在输出功率回退至32 dBm时,功率附加效率大于30%,三阶交调失真小于-37 dBc。
Based on the SiC substrate 0.25μm GaN HEMT process,a C band high efficiency and linearity monolithic microwave integrated circuit(MMIC)power amplifier was designed and implemented.By optimizing the circuit matching structure and selecting the appropriate active device and DC bias condition,low video drain impedance was realized.By means of rear gain compression and front gain expansion offset,high power additional efficiency and good linearity index were realized.The chip size of the power amplifier is 2.35 mm×1.40 mm.The chip test results show that in the 3.7-4.2 GHz frequency range,and under the conditions of the drain voltage of 28 V,the final stage gate voltage of-2.2 V,the front stage gate voltage of-1.8 V and continuous wave,the small signal gain of the power amplifier is greater than 25 dB,the large signal gain is greater than 20 dB,and the saturation output power is greater than 39 dBm.When the output power backs off to 32 dBm,the power additional efficiency is greater than 30%and the third-order intermodulation distortion is less than-37 dBc.
作者
乔明昌
张志国
王衡
Qiao Mingchang;Zhang Zhiguo;Wang Heng(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China;The First Military Representative Office of the Air Force Equipment Department in Hefei,Hefei 230088,China)
出处
《半导体技术》
CAS
北大核心
2021年第2期124-128,共5页
Semiconductor Technology
基金
国家科技重大专项资助项目(2017ZX03001024)。