社会网络分析视角下氮化镓外延生长专利技术合作创新研究

Research on Cooperation Innovation of GaN Epitaxial Growth from the Perspective of Social Network Analysis Based on Patent Data

外延生长作为GaN器件制备领域的核心技术,已成为国际半导体领域的重点研究方向之一。基于1954—2018年GaN外延生长领域专利数据,采用专利计量分析和社会网络分析方法,研究了GaN外延生长领域专利技术竞争态势及专利权人合作网络。研究表明GaN外延生长技术处于相对成熟阶段;GaN外延生长专利合作网络规模不断扩大,已形成较强的社区结构,现阶段的合作网络结构比较利于创新;研究结果以期为我国GaN外延生长技术发展策略的制定提供参考。

Epitaxial growth,as the core technology in the field of GaN device preparation,has become one of the key research directions in the international semiconductor domain.Based on the patent data of GaN epitaxial growth from 1954 to 2018,the patent metrology analysis and social network analysis method are used to explore the patent technology competition situation and patentee cooperation network.Results show that GaN epitaxial growth technology is at a relatively mature stage;its patent cooperation network scale is expanding,and a strong community structure has been formed;the current cooperation network structure is beneficial to innovation.The results are intended to provide references for the development strategy of GaN epitaxial growth in China.