摘要
以CeO_(2)为磨料配制抛光液,研究了磨料质量分数、pH及添加剂对SiO_(2)介质去除速率和表面粗糙度的影响。结果表明,在抛光液的磨料质量分数为1%,pH为5的条件下,SiO_(2)介质的去除速率为248.9 nm/min。向其中加入质量分数为1%的L-脯氨酸或0.075%的阴离子表面活性剂TSPE-PO(三苯乙烯基苯酚聚氧乙烯醚磷酸酯)后,SiO_(2)介质的去除速率分别提高至268.6 nm/min和302.5 nm/min,表面粗糙度(Rq)从原来的0.588 nm分别变为0.601 nm和0.522 nm。
A polishing slurry was prepared using CeO_(2) as abrasive,and the effects of abrasive dosage,pH,and additives on the removal rate and surface roughness of SiO_(2) medium were studied.The results showed that the removal rate of SiO_(2) medium was 248.9 nm/min when polishing with 1wt.%of abrasive at pH 5.After adding 1%of L-proline(L-Pro)or 0.075%of anionic surfactant TSPE-PO(polyoxyethylene tristyrylphenol phosphate)to the slurry,the removal rate of SiO_(2) medium was increased to 268.6 nm/min or 302.5 nm/min,and its surface roughness(Rq)was changed from 0.588 nm to 0.601 nm or 0.522 nm.
作者
杨朝霞
张保国
阳小帆
李烨
李浩然
YANG Zhaoxia;ZHANG Baoguo;YANG Xiaofan;LI Ye;LI Haoran(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Hebei University of Technology,Tianjin 300130,China)
出处
《电镀与涂饰》
CAS
北大核心
2021年第4期247-253,共7页
Electroplating & Finishing
基金
河北省高层次人才资助项目百人计划项目(E2013100006)。
