基于半导体纳米线的环形激光器

Ring Laser Based on Semiconductor Nanowires

针对微光电子机械系统(MOMES)传感器件对微型片上光源的需求与当前半导体纳米线结构制备的进展,设计了一种基于Ⅱ-Ⅵ族半导体纳米线的激光器。将生长出来的纳米线在纯净水中超声制备均匀分布的悬浊液,再滴至载玻片表面,在显微镜50×物镜下观测得到纳米线呈现稀疏分布,约2~3根,选择尺寸较长的纳米线作为制备环形谐振腔的材料。首先使用355 nm激光激发单根的纳米线,得到半导体纳米线受激发射的以505 nm为中心波长的绿光,半高全宽(FWHM)为20 nm,然后采用光纤探针和微米位移平台操控纳米线,制备了一个半径约10μm的环形谐振腔,并得到其激发光谱,谐振峰的中心位置在521.5 nm处,FWHM为0.19 nm,由此计算得到的品质因子值为2700,制备得到的谐振腔激光器可以满足MOMES器件集成的需要。

For the demand of micro-opto-electro-mechanical system(MOMES)sensing devices for miniature on-chip light sources and the current progress in fabricating the semiconductor nanowire structure,a laser based onⅡ-Ⅵsemiconductor nanowires was designed.The grown nanowires in pure water were ultrasonically prepared the uniformly distributed suspension liquid,and then the solution was dropped onto the surface of the glass slide.The nanowires sparsely distributed,i.e.two to three nanowires were observed under the 50×objective lens of the microscope.The nanowires with longer size were chosen as the material to fabricate the ring resonator.Firstly,the 355 nm laser was used to excite a single nanowire,and the semiconductor nanowire was stimulated to emit green light with a center wavelength of 505 nm and a full width at half maximum(FWHM)of 20 nm.Then the fiber probe combined with the micrometer displacement platform was used to manipulate the nanowire,and a ring resonator with a radius of about 10μm was fabricated.The excitation spectrum of the ring resonator was obtained.The center position of the resonance peak is at 521.5 nm,the FWHM is 0.19 nm,and the calculated quality factor value is 2700.Thus,the fabricated resonator laser can meet the requirement of the integration of the MOMES devices.