硅基异构三维集成技术研究进展

Progress of Silicon-based Heterogeneous 3D Integration Technologies

为满足电子系统小型化高密度集成、多功能高性能集成、小体积低成本集成的需求,硅基异构集成和三维集成成为下一代集成电路的使能技术,成为当前和今后的研究热点。硅基三维集成微系统可集成化合物半导体、CMOS、MEMS等芯片,充分发挥材料、器件和结构的优势,使传统的高性能射频组件电路进入到射频前端芯片化,可集成不同节点的CPU、GPU、FPGA等芯片,实现信号处理产品性价比的最优化。梳理了业内射频和信号处理微系统硅基异构集成的主要研究历程和最新进展,分析了基于小芯片集成的接口标准技术,展望了硅基三维异构集成技术的发展趋势。

As electronic systems continuously pursue miniaturized and high-density integrated,mufti-functional and high-performance integrated,small volume and low-cost integrated,siliconbased heterogeneous 3 D integration appears to be a promising technology for the next generation integrated circuits(IC),and becomes a state-of-art research focus.Silicon-based 3 D integrated microsystem can integrate compound semiconductors,CMOS,MEMS and other chips,maximizing the advantages of materials,devices and junctions.It can also make the traditional radio frequency(RF)modules enter into compact RF front-end chips.Chiplets such as CPU,GPU and FPGA with different nodes process can be integrated to optimize the cost-performance of signal processing IC.The research history and latest progress of silicon-based heterogeneous integration(HI)of RF and signal processing microsystems are reviewed.The interface standard for chiplets HI is analyzed,and the development trend of HI is prospected.