导热金刚石同大尺寸芯片的低温烧结银连接工艺

Low-temperature Sintering Silver Joining Process of Thermal Conductive Diamond and Large-size Chip

通过高导热银浆实现了连接大面积(>100 mm^(2))半导体硅片和金刚石的低温低压烧结技术。通过对金刚石表面镀覆金属薄膜,增强同烧结银界面处固态原子扩散,开发了商用烧结银膏在200℃下低温烧结工艺,得到金刚石-硅的均匀连接界面,计算得到孔隙率约为9.88%,中间烧结银层等效热阻约为1.38×10^(-5)m^(2)·K/W。

The low-temperature and low-pressure sintering technology for connecting large-area(>100 mm^(2))semiconductor silicon wafers and diamond through high thermal conductivity silver paste was realized in this paper.The surface was coated with a metal film to enhance the diffusion of solid atoms at the interface.The commercial silver paste was sintered at a low temperature of about200℃to obtain an uniform connection interface of diamond-silicon bonding.The calculated porosity is about 9.6%,and the equivalent thermal resistance of the middle-sintered silver layer is about 1.38×10^(-5)m^(2)·K/W.