基于氧化铟锡电极的透明忆阻器件工作机制研究进展

Research Progress on Resistance Switching Mechanism of Transparent Memristor Based on Indium Tin Oxide Electrode

随着电子技术的发展,兼具透明、柔性等特性的功能电子器件得到了广泛关注。作为新型电子存储器件,忆阻器在新一代信息技术领域(包括低功耗类脑计算、非易失逻辑、数据存储等)有着广阔的应用前景,成为近年来备受关注的新型纳米器件。氧化铟锡是一种常用的透明导电材料,因其优异的光学透明度、稳定的物理、化学特性等优点,成为制备新型透明忆阻器件的理想电极。本文首先简略介绍了忆阻器件的结构,接着综述了基于氧化铟锡材料的忆阻器件的研究和应用,包括其作为存储器、电子突触和痛觉感受器等。然后针对氧化铟锡忆阻器的阻变机制,特别是近年来新发现的铟扩散机制进行了进一步介绍,最后总结展望了氧化铟锡忆阻器的发展前景。

With the development of electronic technology,functional electronic devices with characteristics such as transparency and flexibility have received widespread attention.As a novel electronic device,the memristor has broad application prospects in the new generation of information technology including low‑power neuromorphic computing,non‑volatile logic,data storage,etc.,and has become a new type of nanodevice that has attracted much attention in recent years.Indium tin oxide,which is an ideal conductive oxide material for transparent memristor preparation due to its excellent optical transparency,is always used in memristor.This review first briefly introduces the structure of memristors,and then reviews the research and application of memristors based on indium tin oxide materials,including their use as memory,electronic synapses,and nociceptor.Then the resistive switching mechanism of indium tin oxide based memristors,especially the newly discovered indium diffusion mechanism in recent years,is summarized.At last,the development prospect of indium tin oxide memristors is summarized and forecasted.