晶闸管反向恢复特性研究及器件优化

Research and Device Optimization on Reverse Recovery Characteristics of Thyristors

随着大功率晶闸管逐步应用到超工频、高脉冲等工况,器件的反向恢复过程失效成为突出问题。在此使用SILVACO TCAD仿真软件进行反向恢复过程机理和晶闸管结构的关系探讨。通过调整掺杂浓度和区域形成深阱结构,实现了器件的通态损耗和恢复功率均衡,及反向恢复特性优化。并针对改进结构器件进行对比测试,改进后的器件具有很好的软度因子、更短的反向恢复时间、更小的反向恢复电流以及更小的恢复损耗。

With the gradual application of high-power thyristors to ultra-power frequency and high pulse current conditions,the failure of reverse recovery process of devices has become a prominent problem.SILVACO TCAD simulation software is used to discuss the relationship between the mechanism of reverse recovery process and thyristors structure.By adjusting the doping concentration and region to form a deep well structure,the balance between on-state loss and recovery power and the optimization of reverse recovery characteristics are realized.The improved device has better softness factor,shorter reverse recovery time,smaller reverse recovery current and smaller recovery loss.