石墨烯/光波导集成的非对称场效应结构特性研究

Characteristics of graphene/waveguide integrated device with asymmetrical field-effect transistor structure

基于微纳加工技术制备了具有非对称场效应结构的石墨烯/光波导集成器件,首次实验测试了交换源漏电极前后器件场效应输运特性差异,并与石墨烯场效应管进行对比分析了引入光波导结构对器件输运特性的影响。由石墨烯场效应器件模型对测试结果进行分析,结果表明交换源漏电极前后器件载流子迁移率分别为787.76和394.67 cm^(2)·V^(-1)·s^(-1),表现出明显手性差异。同时与传统石墨烯场效应器件相比,引入光波导结构改变了石墨烯沟道表面残余载流子浓度、沟道形态及掺杂分布。由此产生的电势分布和感应电荷浓度差异在影响器件输运性能的同时表现出了与传统器件相反的输运特点。

A graphene/optical waveguide integrated device with asymmetrical field-effect structure was fabricated by micro-nano processing technology.For the first time,we examined the transport properties of the device before and after the source and drain electrodes were swtiched.Then a graphene field-effect transistor(GFET)was fabricated and tested to investigate the performance differences of the device with and without waveguide.The results indicate that the graphene/waveguide integrated device exhibits opposite transport properties compare to the GFET device.According to the GFET model,the carrier mobility in the graphene/waveguide integrated device reaches 787.76 and 394.67 cm^(2)·V^(-1)·s^(-1) under different electrode connections respectively.Additionally,the introduction of the waveguide changes the residual carrier density,surface appearance,and doping distribution of the graphene channel,which induces the electrical potential and charge concentration differences of the device.