一步CVD法制备WS_(2)-MoS_(2)垂直异质结及其表征

Preparation and Characterization of WS_(2)-MoS_(2) Vertical Heterostructure by One-Step CVD

本文主要研究了WS_(2)-MoS_(2)垂直异质结的制备及其光电性能。以氧化钼(MoO_(3))、氧化钨(WO_(3))、硫粉(S)作为反应物,采用改良的一步化学气相沉积法(CVD)实现高质量的WS_(2)-MoS_(2)垂直异质结的制备。使用拉曼光谱仪(Raman)、光致发光光谱仪(PL)、光学显微镜(OM)、原子力显微镜(AFM)、透射电子显微镜(TEM)、X射线光电子能谱仪(XPS)等设备,对异质结的形貌、元素组成等进行了表征。最后制备了基于WS_(2)-MoS_(2)异质结的光电探测器,测量了包括输出特性曲线、转移特性曲线、光电流曲线等光电特性。经测试,WS_(2)-MoS_(2)异质结光电探测器在532 nm激光模式下展现了良好的光响应特性,使其能应用于高效率的光电子器件的制备,在微电子学领域具有广阔的应用前景。

The preparation and optoelectronic properties of WS_(2)-MoS_(2) vertical heterostructure were mainly studied.Molybdenum oxide(MoO_(3)),tungsten oxide(WO 3)and sulfur powder(S)were employed as reactants,and then high quality WS_(2)-MoS_(2) vertical heterostructures were prepared by using an improved one-step chemical vapor deposition method(CVD).Raman spectroscopy(Raman),photoluminescence spectroscopy(PL),optical microscope(OM),atomic force microscope(AFM),transmission electron microscope(TEM),X-ray photoelectron spectroscopy(XPS)and other related devices were used to characterize the morphology and element composition of the heterostructures.At last,the photodetector based on WS_(2)-MoS_(2) vertical heterostructure was produced,and the photoelectric characteristics of the fabricated device including the output characteristic curve,transfer characteristic curve and photocurrent curve were measured.The test results show that the photodetector based on WS_(2)-MoS_(2) vertical heterostructure exhibits wonderful photoresponse characteristics under the 532 nm laser mode.It obviously means that the photodetector based on WS_(2)-MoS_(2) vertical heterostructure can be applied to the preparation of high-efficiency optoelectronic devices and have broad application prospects in the field of microelectronics.