基于智能感知的In_(x)Al_(1-x)N薄膜的气敏性能研究

Research on gas sensitive properties of In_(x)Al_(1-x)N film based on intellisense

基于Ⅲ-V族半导体的产品已经广泛应用于移动设备、无线网络、卫星通信和光电子技术领域,其中,新型的Ⅲ-V族半导体铟铝氮(In_(x)Al_(1-x)N(x=0~1))因为具有临界击穿电压高、导热系数高、能抵抗强辐射以及化学性质稳定等优点而成为感知器件的研究热点。该文首先采用磁控溅射技术以金属In、金属Al和陶瓷Si 3N 4为靶材制备出Si掺杂和纯In_(x)Al_(1-x)N薄膜。在衬底温度600℃、压强0.6pa、Ar∶N 2流量比为20∶10、金属铟靶材和铝靶材的溅射功率分别为70W和300W、氮化硅的靶材附加功率分别为0W,20W,40W和60W条件下制备出薄膜,研究了所制备薄膜的电性能、拉曼光谱、光致发光(PL)光谱。测试结果表明:为氮化硅靶材附加40W功率时,掺杂Si的In_(x)Al_(1-x)N薄膜的载流子浓度比纯In_(x)Al_(1-x)N薄膜提高了两个数量级;硅掺杂的In_(x)Al_(1-x)N薄膜测得的拉曼光谱中,E2(HI)和Al(LO)模式峰都发生了右方移动,这表明了样品的缺陷增加,应力随之增强;PL光谱测试显示In_(x)Al_(1-x)N的发光峰较高,且薄膜随着Si含量的增加,可能导致薄膜缺陷增加。其次,研究了所制备薄膜的气体敏感性,测试表明,掺Si的In_(x)Al_(1-x)N薄膜的气敏性优于纯In_(x)Al_(1-x)N薄膜,且细颗粒的掺Si的In_(x)Al_(1-x)N薄膜的气敏性高于大颗粒,证明小颗粒的表面活性大,易吸附气体使得响应灵敏度高,为气敏传感器的开发和信息领域的潜在应用打下基础。

Because the Ⅲ-Ⅴ group semiconductor′s products have been widely used in mobile devices,wireless network,satellite communications and optical-electronic technology,especially indium aluminum nitrogen(In_(x)Al_(1-x)N(x=0~1))materials which are the new-type III-V semiconductors,which have many advantages with the high critical breakdown voltage,high thermal conductivity,strong resistance to radiation and stable chemical propertiesand become the researchfocus in the sensing devices.In this paper,the Si-doped and un-doped In_(x)Al_(1-x)N films were first prepared in a magnetron sputtering system with metal In,metal Al and ceramic Si 3N 4 target materials,under a substrate temperature of 600℃,a pressure of 0.6 Pa,a flow ratio of Ar∶N 2 of 20∶10,an In/Al target material sputtering power of 70W/300W,and a Si 3N 4 target material sputtering power of 0 W,20 W,40 W and 60 W respectively.The electrical property,Raman spectrum and photoluminesc ence(PL)spectrum of the prepared films were studied.The electrical property test shows that the carrier concentration of Si-doped In_(x)Al_(1-x)N films under Si 3N 4 target material power of 40W is improved to two orders of magnitude to un-doped In_(x)Al_(1-x)N films.The E2(HI)and Al(LO)in the Raman spectrum of Si-doped In_(x)Al_(1-x)N films both shift to the right which indicates that the stress of the films becomes large,and the PL spectrum measurement presents the higher luminescence peak in In_(x)Al_(1-x)N films with the increasing of Si content,which can result from that defect increases of films.Further,the gas sensitivity of the prepared films are tested,the results reveal that the gas-sensitive property of Si-doped In_(x)Al_(1-x)N films is better than un-doped In_(x)Al_(1-x)N films,and the gas-sensitive property of small grains Si-doped In_(x)Al_(1-x)N films are higher than that of big ones,which is proved that the surface activity of small particles is better than one of the big particles the gas is easily adsorbed,and the response sensitivity of the films becomes higher.It lays a foundation for the development of gas sensors and potential applications in the information domain.