具有荧光特性的硅量子点合成及在铁离子检测中应用

Highly fluorescent silicon quantum dots:Synthesis and application in ferric ions detection

设计了一种新型的高荧光硅量子点(Silicon quantum dots,Si QDs)的合成方法,并尝试探索其制备机理以及在三价铁离子(Fe^(3+))检测中的应用.与传统的还原法制备硅量子点相比,3-氨丙基三乙氧基硅烷(APTES)在硫酸的作用下能够得到具有高荧光、低尺寸特性的硅量子点.结果表明该硅量子点的最佳激发波长和对应发射波长分别为305 nm和384 nm.在水溶液中,Si QDs和Fe^(3+)通过配位作用使得硅量子点发生明显聚集诱导淬灭现象(aggregation caused quenching ACQ),该方法能在2.5μM~250μM的范围内实现对Fe^(3+)的灵敏检测,检出限为670 nM.

A novel strategy for the synthesis of silicon quantum dots(Si QDs)with high-fluorescence was designed,in an attempt to explore the mechanism of synthesis and application in the detection of Ferric ions(Fe^(3+)).Compared with traditional preparation method,the difference is that 3-aminopropyltriethoxysilane(APTES)can be used to obtain Si QDs with high fluorescence and low size characteristics in the presence of sulfuric acid without any reductants.The results showed that the optimal excitation wavelength and emission wavelength of Si QDs were 305 nm and 384 nm respectively.In an aqueous solution,Si QDs undergoes aggregation caused quenching(ACQ)due to coordination of Si QDs and Fe^(3+),which can be used for sensitive and fast detection of Ferric ions within an range of 2.5μM to 250μM,with a detection limit of 670 nM.