高效多晶硅锭侧部缺陷生长抑制工艺

Study on Side Growth Inhibition in High Efficiency Multi-crystalline Silicon Ingot

靠近铸锭坩埚的多晶硅片因坩埚杂质扩散以及杂质分凝到头部等影响,在电池制作过程中会导致硅片从尾部到头部出现效率衰减情况。本文主要通过抑制硅锭侧部杂质扩散和形核长晶,将头尾衰减区域提高,从而达到提升硅片整体效率的目的。结果显示,硅块少子寿命的“花纹”比例(位错)均值明显程下降趋势,平均下降了2.54%。从硅锭底部至头部的硅片制作成电池的转换效率衰减趋势降低,平均效率提升约0.1%。

The multi-crystalline silicon wafer near the ingot crucible is affected by the diffusion of impurities in the crucible and the segregation of impurities to the head,the efficiency of multi-crystalline silicon wafer near the bottom of the crucible will decrease from the bottom to the head in the process of solar cell.The solution was to increase the attenuation region of the head and bottom,so as to improve the overall efficiency of the silicon wafer by restraining the impurity diffusion and nucleation of the silicon ingot side.The results showed that the mean value of"pattern"ratio(dislocation)of minority carrier lifetime of silicon block decreased obviously,with an average decrease of 2.54%.From the bottom to the head of the silicon ingot,the conversion efficiency of the battery decreased,and average efficiency increased by about 0.1%.