110 GHz在片16项误差模型校准件定值方法研究

Investigation into Definition Method for On-wafer 16-term Error Model Calibration Kits Below 110 GHz

现有商用集总参数校准件电路模型使用简便,但由于校准件电路模型的不完善、电路中参数在提取过程中采用拟合算法等原因,导致其定值准确度受限。从用于高频串扰修正的16项误差模型校准件设计入手,给出了校准件高精度的定值方法——即通过研制辅助的Multiline TRL校准标准,采用测试加仿真的方式对校准件进行定值,并采用定值文件作为定值样式。采用定值过的16项误差模型校准件校准在片测试系统,并与美国NIST基于Multiline TRL的二次校准方法比较,在110 GHz内,两者S21相差在0.30 dB以内,相位相差1°以内。所不同的是,16项误差模型校准件的个数远低于NIST,并且在校准过程中不需要移动探针。在保证准确度的前提下,大大提高了测试效率。

The conventional lumped parameter circuit model has been widely used in the definition of calibration kits for on-wafer probing. However,the accuracy of the defined model parameter is not great,due to the non-ideal circuit model and fitting algorithm used in extracting circuit parameters. A more accurate definition method is presented for 16-term calibration kits that is designed to correct the crosstalk at high frequencies. The new definition method is based on measurements of fabricated assistant multiline TRL calibration kits and full-wave simulations. The measurement system corrected by such defined 16-term calibration kits was compared with two-tier calibration method of Multiline TRL proposed by NIST. The results shows excellent agreement between these two techniques,i. e. the difference in transmission magnitude is within 0. 30 dB and the phase is within 1. 0°.The proposed definition method offers appealing advantages over the NIST technique,in terms of smaller number of standards required and fewer movements of probes.