摘要
在ITO玻璃基体上采用磁控溅射法制备用于电致变色玻璃的V_(2)O_(5)离子储存薄膜,重点研究了溅射时间(2~5 h)对V_(2)O_(5)薄膜结构与性能的影响。研究结果表明:随着溅射时间延长,V_(2)O_(5)薄膜的厚度随着溅射时间延长而增厚,透过率随着厚度增加而呈现降低趋势;溅射4~5 h下制备的V_(2)O_(5)薄膜离子储量高于20 mC/cm^(2)。综合考虑离子储存量和可见光透过率,磁控溅射法制备离子储存V_(2)O_(5)薄膜的溅射时间控制为4 h为宜。
V_(2)O_(5)ion storage films were prapared by magnetron sputtering on ITO glass substrate,and the effect of sputtering time(2-5 h)on the structure and properties of V_(2)O_(5)film was mainly studied.The results show that with the increase of sputtering time,the thickness of the film is increased,meanwhile,the average transmittance is decreased.The ion storage capacity of V_(2)O_(5)films excess 20 mC/cm^(2)when the sputtering time is 4 h or 5 h.Taking into account the ion storage and visible light transmittance,the sputtering time of ion storage V_(2)O_(5)films by magnetron sputtering is controlled to 4 h.
作者
付亚东
刘鉴宁
刘红英
张远洋
张得全
梁小平
FU Yadong;LIU Jianning;LIU Hongying;ZHANG Yuanyang;ZHANG Dequan;LIANG Xiaoping(Tianjin SYP Engineering Glass Co.,Ltd.,Tianjin 300409,China;School of Materials Science and Engineering,Tiangong University,Tianjin 300387,China)
出处
《玻璃》
2021年第4期21-24,29,共5页
Glass
基金
天津市科技计划项目(20YDTPJC00800)。
