ITO平面微电极上P(VDF-TrFE)薄膜的制备及性能表征

Preparation and Performance of P(VDF-TrFE)Film on ITO Planar Microelectrode

在ITO平面微电极上设计了P(VDF-TrFE)纳米级薄膜,以构建仅电场作用的模式,并避免其他因素的干扰。通过旋涂法制备了不同厚度的P(VDF-TrFE)薄膜,当厚度达到470nm时,薄膜具有足够的致密度和绝缘性,能隔绝电极上的微电流和可能产生的电化学产物。由于电极上覆有薄膜,在生物电刺激的应用中,还可消除电极材料不均匀对细胞行为的影响。采用覆有P(VDF-TrFE)薄膜的ITO平面微电极对间充质干细胞(MSCs)进行电场刺激,可以显著促进MSCs的增殖和成骨分化,其最佳刺激电压为250mV。这项工作为更充分地理解和发挥电刺激的生理医疗作用提供了新的思路和策略。

A P(VDF-TrFE)nano-film was designed on the ITO planar microelectrode to construct a mode that merely acts as electric field,avoiding any interference from other factors.P(VDF-TrFE)films with different thicknesses were prepared by spin-coating.When the thickness reached 470 nm,the film was dense and insulating enough to isolate microcurrents and possible electrochemical products from the electrode.Due to the presence of the film on the electrode,it could also eliminate the influence of uneven electrode material on cell behavior in the application of biological electric stimulation.In addition,electric field stimulation of mesenchymal stem cells(MSCs)by ITO planar microelectrodes covered with P(VDF-TrFE)films could significantly promote the proliferation and osteogenic differentiation of MSCs,and the optimal stimulation voltage was 250 mV.This work provides new ideas and strategies for more fully comprehending and exerting the physiological and medical effects of electrical stimulation.