硫粉气化温度对制备WS2薄膜的影响

Effect of Gasification Temperature of Sulfur Powder on Preparation of Tungsten Disulfide Thin Films

采用熔融盐辅助化学气相沉积(CVD)法在蓝宝石(Al_2O_3)衬底上制备WS_2薄膜,改变硫粉的气化温度(750~800℃),探寻其对WS_2薄膜生长的影响,为制备出大面积WS_2薄膜提供理论依据。采用光学显微镜、扫描电子显微镜(SEM)和拉曼(Raman)光谱对WS_2薄膜的形貌、结晶性和厚度进行分析。800℃时,WS_2薄膜平均边长可达310μm,Raman特征峰的波数差为64.60 cm~(-1)(单层)。随着硫粉气化温度的升高,WS_2薄膜的生长经历了形貌及尺寸的转变,这表明在沉积过程中,硫粉引入时机对WS_2薄膜的形核、生长至关重要,适当的气化温度可以制备出尺寸较大、结晶性能良好的WS_2薄膜。

Tungsten disulfide(WS2)thin films were prepared by melting salt-assisted chemical vapor deposition(CVD)method on sapphire(Al2O3)substrate.To provide theoretical basis for the preparation of large-size WS2 thin films,the gasification temperatures of sulfur powder were changed in the range of 750-800℃to investigate their effects on the growth of WS2 thin films.The morphology,crystallinity and thickness of WS2 thin films were analyzed by optical microscope,scanning electron microscopy and Raman spectrometry,respectively.At 800℃,the average side length of WS2 thin film is 310μm,and the wave number difference of Raman characteristic peak is 64.60 cm-1(monolayer).With the increase of the gasification temperature of sulfur powder,the WS2 thin films change in morphology and size,indicating that the timing of sulfur involved in the deposition process is crucial for the nucleation and growth of WS2 crystals.Large-size WS2 thin films with good crystallization performance can be prepared at appropriate gasification temperatures.