三次非线性忆阻器的双端口建模与特性分析

Dual port modeling and its characteristic analysis of cubic nonlinear memristor

为拓广忆阻器仿真和应用研究,通过分析压控型忆阻器的数学模型,建立了一种基于Simulink的双端口模型。首先,将忆阻器的电流表示为忆导与输入电压的乘积;将忆阻器的阻值变化率表示为输入电压的三次非线性函数和阶跃函数的乘积。然后,将忆阻器的电流作为受控电流源的控制信号,通过电压源、阻值变化率和积分器获得忆阻器的阻值,实现忆阻器的双端口建模,该模型体现了忆阻值对历史状态的依赖性。最后,通过对双端口模型输入不同信号的仿真,验证了双端口模型的有效性,得到了滞回环曲线随幅值和频率的变化规律。建立的双端口模型可与其他二端口元件直接相连,拓广了忆阻器的应用范围。

In order to expand the simulation and application research of memristors,a dual-port model based on Simulink was established by analyzing the mathematical model of a voltage-controlled memristor.Firstly,the current of the memristor was expressed as the product of the memory and the input voltage,and the change rate of the memristive resistance value was expressed as the product of the cubic nonlinear function and the step function.The current was used as the control signal of the controlled current source,and the resistance of the memristor was obtained from the voltage source,the resistance change rate and the integrator,and the dual port modeling of the memristor was realized.The model reflects the dependence of the memristor on historical state.Finally,using the simulation of different input signals of the dual-port model,the validity of the dual-port model is verified,and the variation rule of hysteresis loop curve with amplitude and frequency is obtained.The established dual-port model can be directly connected with other two-port components,and this expands the application range of memristors.