高迁移率的钛掺杂氧化铟薄膜在晶硅/非晶硅异质结电池上的应用研究

High Mobility Ti-doped In_(2)O_(3) Films Used for Amorphous/Crystalline Silicon Heterojunction Solar Cells

采用钛掺杂氧化铟旋转靶制备透明导电薄膜应用在晶硅/非晶硅异质结电池上。在不同氧含量下,研究钛掺杂氧化铟薄膜(T100薄膜)的光电性能,同时对比分析ITO薄膜。在电镜下T100薄膜呈现出柱状结构,并且展示出优异的光学性能。T100薄膜最大载流子迁移率可以达到75.6 cm~2·(V·s)^(-1)。相比于ITO薄膜,T100薄膜具有优异的电学传导和透光率,因此在异质结电池量产线上电池转换效率可以实现0.26%的提升。

A newly Ti-doped In_(2)O_(3) rotary target was used to prepare transparent conductive oxide(TCO)films for amorphous/crystalline silicon heterojunction solar cells.The changes in electrical and optical properties of TCO films were investigated based on T100 thin films deposited with various O2 contents and compared with indium tin oxide(ITO).Results show that a columnar structure is observed and exhibits high quality of optical performance.Maximum mobility of 75.6 cm^(2)·(V·s)^(-1) is observed in Ti-doped In_(2)O_(3) films.Compared to the results of ITO films,it is verified that the cell conversion efficiency based on the heterojunction(HJT)production line improves by 0.26%of T100 material,mainly benefiting from the excellent electrical transport properties,as well as the high transparency.