粉末冶金W/Re合金靶材的显微结构及磁控溅射沉积性能

Microstructure and Magnetron Sputtering Properties of W/Re Alloy Targets Fabricated by Powder Metallurgy

为了研制高品质W/Re合金靶材,采用机械混料、压制成形和真空烧结致密化工艺路线制备了纯钨及铼含量分别为1%、5%、10%(质量分数)的钨/铼(W/Re)合金,测试了W/Re合金的致密度、晶粒度及晶粒取向、磁控溅射沉积等性能。研究表明,W/Re合金致密度及纯度均随Re含量增加而逐渐提高,而晶粒逐渐细化。W/10%Re合金靶材晶粒尺寸主要介于10~40μm之间,W/Re合金晶粒随机分布,并未出现明显的择优取向,且其中小角度晶界(<10o)达85%以上,非常适用于磁控溅射镀膜。随着磁控溅射沉积压力的提高,W/Re合金薄膜的晶粒尺寸逐渐细化,镀膜表面平整程度逐渐提高,薄膜的厚度呈逐渐增加的趋势。镀膜在40.5o、58.6o、73.5o附近出现分别属(110)、(200)和(211)晶面的衍射峰,且随着沉积压力的升高,(110)晶面衍射峰逐渐减弱,而(200)晶面衍射峰则稍有增强。纯W靶材由于致密度及纯度偏低,而且晶粒较粗大,无法磁控溅射出完整理想的薄膜。

In order to development high quality W/Re alloy targets,pure W and W/Re alloy(with 1 wt%,5 wt%and 10 wt%Re)were fabricated by mechanical mixing,press forming and vacuum sintering.Properties such as relative density,grain size and direction,magnetron sputtering of W/Re alloy were investigated.The results show that both relative density and purity of W/Re alloy increase with the increase of the Re content.In addition,grain size decreases with Re addition.And grain size of W/10 wt%Re alloy target is mainly distributed between 10 and 40μm.The grain size of W/Re alloy is randomly distributed without preferred orientation.And content of small angle grain boundary(<10°)of W/10 wt%Re alloy is more than 85%.The grain size of W/Re alloy thin film is gradually refined as deposition pressure of magnetron sputtering increases.Meanwhile,both surface flatness and thickness of thin film are gradually increased.XRD spectra of thin films show that(110),(200)and(211)diffraction peaks appear near 40.5°,58.6°and 73.5°,respectively.As the deposition pressure increases,the intensity of(110)diffraction peaks decreases gradually,while that of(200)diffraction peaks increases gradually.However,perfect thin film is impossibly prepared by magnetron sputtering from pure W target for its low density and purity with large grain size.