摘要
Near-field thermophotovoltaic systems functioning at 400-900 K based on graphene-hexagonal-boron-nitride heterostructures and thin-film InSb p-n junctions are investigated theoretically.The performances of two near-field systems with different emitters are examined carefully.One near-field system consists of a graphene-hexagonalboron-nitride-graphene sandwiched structure as the emitter,while the other system has an emitter made of the double graphene-hexagonal-boron-nitride heterostructure.It is shown that both systems exhibit higher output power density and energy efficiency than the near-field system based on mono graphene-hexagonal-boron-nitride heterostructure.The optimal output power density of the former device can reach 1.3 × 105 W/m2,while the optimal energy efficiency can be as large as 42% of the Carnot efficiency.We analyze the underlying physical mechanisms that lead to the excellent performances of the proposed near-field thermophotovoltaic systems.Our results are valuable toward high-performance moderate temperature thermophotovoltaic systems as appealing thermal-to-electric energy conversion(waste heat harvesting) devices.
作者
Rongqian Wang
Jincheng Lu
Jian-Hua Jiang
王荣倩;陆金成;蒋建华(School of Physical Science and Technology&Collaborative Innovation Center of Suzhou Nano Science and Technology,Soochow University,Suzhou 215006,China;Center for Phononics and Thermal Energy Science,China-EU Joint Center for Nanophononics,Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology,School of Physics Science and Engineering,Tongji University,Shanghai 200092,China)
基金
Supported by the National Natural Science Foundation of China(Grant Nos.11675116 and 12074281)
the Jiangsu Distinguished Professor Funding,a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD)
the China Postdoctoral Science Foundation(Grant No.2020M681376).
