一种900V大功率MOSFET的工艺仿真设计

Process Simulation Design of a 900 V High Power MOSFET

高压功率MOSFET器件由于其在耐压、电流能力、导通电阻等方面固有的优点应用十分广泛,是武器装备体系中不可或缺的关键基础元器件。以一款900 V大功率MOSFET器件为例,为分析其VDMOS基本结构、工作原理和主要参数,利用工艺仿真软件Silvaco和Synopsys设计一套仿真实验,对外延层材料选取、氧化和注入等重要工艺过程优化、掺杂区工艺条件确定,以及对器件的电学特性如击穿电压、阈值电压、器件输出特性等进行仿真,为相关产品的研制提供参考和保障。经实际流片及末测验证,该仿真设计能够实现预期目标。

High-voltage power MOSFET devices are widely used because of the inherent advantages in voltage withstand,current capability,on-resistance and so on,and are essential key basic components in weapon equipment system.Taking a 900 V high-power MOSFET device as an example,in order to analyze the basic structure,working principle and main parameters of VDMOS,a set of simulation experiments are designed by using the process simulation software Silvaco and Synopsys,which includes the selection of epitaxial layer materials,the optimization of oxidation and implantation as important processes,the determination of process conditions in doped regions,and the electrical characteristics of devices such as breakdown voltage,threshold voltage and device output characteristics,providing reference and guarantee for the development of related products.The simulation design can achieve the expected goal after practical tape-out and final test.